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Top>News>High Efficiency Deep Ultraviolet Light Laser Achieved - Development of the World's First Device Structure that Utilizes BBO Crystals

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High Efficiency Deep Ultraviolet Light Laser Achieved - Development of the World's First Device Structure that Utilizes BBO Crystals

Ichiro Shoji, Professor in the Faculty of Science and Engineering (Department of Electrical, Electronic, and Communication Engineering), has developed a new technique for the high efficiency generation of deep ultraviolet light lasers which are being developed in fields such as the semiconductor industry and life science. The deep ultraviolet light laser is generated by a laser being passed through a crystal and converting the wavelength. This time, a wavelength conversion device which possesses a structure that has never before been seen in the world has been developed by unique implementation technology. It was possible to achieve a laser generation efficiency of more than 1.6 times that compared to those that were created with traditional structures. In theory, it is possible to obtain a result that is ten times more efficient than compared to wavelength conversions that utilize bulk crystals of the same size whose structure has not been applied to this process. There are expectations that this can be used in advanced materials processing, such as high density electronic circuit basic materials which accelerate the miniaturization and high efficiency of digital electronics as well as light device materials.

These results will be presented at the international conference on Nonlinear Optics (NLO) which will be held in Hawaii from 17-18 July 2011.

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