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Newly developed diamond transistor expected to reduce energy consumption in automobiles

A research group led by Professor Hiroshi Kawarada (Faculty of Science and Engineering) has developed a highly efficient transistor used to reduce energy consumption in electric automobiles and trains. The transistor is activated through regulation of electron holes on the surface of diamonds, can sustain 1600 volts per micrometer, and is resistant to temperatures of up to 400℃. This diamond transistor considerably out performs standard silicon transistors and can compete with silicon carbide and gallium nitride power semiconductors which have received significant attention in recent years. The transistor is expected to reduce power consumption for engines in automobiles, trains, and robots.

Research results were presented at the IEEE International Electron Device Meeting (IEDM) held in San Francisco from December 15th to 17th.