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Campus Now

Early Spring Issue (Apr. 2015)


Two research groups announced at the IEEE International Electron Device Meeting (IEDM)

Tangible results from the “Waseda of Research”

Further energy saving for automobiles etc. through high-performance diamond transistors with the world’s highest pressure resistance

Professor Hiroshi Kawarada giving a presentation on diamond transistors

A research group led by Professor Hiroshi Kawarada (Faculty of Science and Engineering) succeeded in developing a transistor which uses diamond semiconductors and is capable of stable operation at intervals of twenty micrometers under maximum conditions of 1600V and 400ºC. This diamond transistor is an essential part of energy-saving technology for EVs (electric vehicles) and trains. Maximum pressure resistance of 1600V and maximum thermal resistance of 400ºC are the highest values in the world. The performance of the developed diamond transistor greatly surpasses the currently used silicon transistors (thermal resistance of approximately 180 ºC). The development is expected to have a significant ripple effect on power electronics, such as lowering the amount of power consumed by power systems such as automobiles, trains and robots.

The significance of this research was recognized and Professor Kawarada gave a presentation at the IEEE International Electron Device Meeting (IEDM) which was held in December 2014 in San Francisco, USA. The IEDM is the top international meeting in the field of semiconductor devices. Intel, Samsung Electronics, Toshiba and other top manufacturers from throughout the world compete to give the best presentation.

Akito Suzuki, Second-Year Graduate Student
Using game GPUs to predict the performance limit of MOS transistors

Akito Suzuki (front) realized outstanding research results despite being a second-year graduate student. Photo taken together with his instructor Professor Takanobu Watanabe.

A research group led by Professor Takanobu Watanabe (Faculty of Science and Engineering) and Akito Suzuki (second-year student in the Master’s Program of the Graduate School of Advanced Science and Engineering) succeeded in clarifying the factors which determine the integration limit of MOS transistors, which are a basic element of semiconductor LSIs that greatly influence the processing capability of electronic devices such as smartphones. Since conducting graduate research as an undergraduate student, Akito has continued to pursue this research theme using unique methods which he developed himself. Similar to the research group led by Professor Kawarada, Akito gave a presentation of results at the international conference IEDM.

This simulator realizes extremely high cost-performance while providing a high degree of freedom for model shapes and calculation scale. It is expected to lead to significant advances in transistor research